ESM2012DV npn darlington power module n high current power bipolar module n very low r th junction to case n specified accidental overload areas n ultrafast freewheeling diode n isolated case (2500v rms) n easy to mount n low internal parasitic inductance industrial applications: n motor control n ups n dc/dc & dc/ac converters internal schematic diagram september 1997 isotop absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -5 v) 150 v v ceo(sus) collector-emitter voltage (i b = 0) 120 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 120 a i cm collector peak current (t p = 10 ms) 180 a i b base current 2 a i bm base peak current (t p = 10 ms) 4 a p tot total dissipation at t c = 25 o c175w t stg storage temperature -55 to 150 o c t j max. operating junction temperature 150 o c v iso insulation withstand voltage (ac-rms) 2500 o c 1/8
thermal data r thj-case r thj-case r thc-h thermal resistance junction-case (transistor) max thermal resistance junction-case (diode) max thermal resistance case-heatsink with conductive grease applied max 0.7 0.9 0.05 o c/w o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer # collector cut-off current (r be = 5 w ) v ce = v cev v ce = v cev t j = 100 o c 1.5 10 ma ma i cev # collector cut-off current (v be = -5v) v ce = v cev v ce = v cev t j = 100 o c 1 7 ma ma i ebo # emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 5 a l = 15 mh v clamp = 125 v 125 v h fe * dc current gain i c = 100 a v ce = 5 v 1200 v ce(sat) * collector-emitter saturation voltage i c = 70 a i b = 0.25 a i c = 70 a i b = 0.25 a t j = 100 o c i c = 100 a i b = 1 a i c = 100 a i b = 1 a t j = 100 o c 1.25 1.35 1.5 1.65 1.5 2 v v v v v be(sat) * base-emitter saturation voltage i c = 100 a i b = 1 a i c = 100 a i b = 1 a t j = 100 o c 2.3 2.35 3 v v di c /dt rate of rise of on-state collector v cc = 90 v r c = 0 t p = 3 m s i b1 = 0.5 a t j = 100 o c 200 230 a/ m s v ce (3 m s)? ? collector-emitter dynamic voltage v cc = 90 v r c = 1.3 w i b1 = 0.5 a t j = 100 o c 23v v ce (5 m s)? ? collector-emitter dynamic voltage v cc = 90 v r c = 1.3 w i b1 = 0.5 a t j = 100 o c 1.8 2.5 v t s t f t c storage time fall time cross-over time i c = 70 a v cc = 90 v v bb = -5 v r bb = w v clamp = 125 v i b1 = 0.25 a l = 60 m h t j = 100 o c 0.9 0.15 0.3 2 0.3 0.6 m s m s m s v cew maximum collector emitter voltage without snubber i cwoff = 120 a i b1 = 1a v bb = -5 v v cc = 90 v l = 60 m h r bb = 1.25 w t j = 125 o c 125 v v f * diode forward voltage i f = 100 a t j = 100 o c0.921v i rm reverse recovery current v cc = 125 v i f = 100 a di f /dt = -200 a/ m s l < 0.05 m h t j = 100 o c 10 14 a * pulsed: pulse duration = 300 m s, duty cycle 1.5 % # see test circuits in databook introduction to evaluate the conduction losses of the diode use the following equations: v f = 0.66 + 0.0034 i f p = 0.66 i f(av) + 0.0034 i 2 f(rms) ESM2012DV 2/8
safe operating areas derating curve collector emitter saturation voltage thermal impedance collector-emitter voltage versus base-emitter resistance base-emitter saturation voltage ESM2012DV 3/8
reverse biased soa reverse biased aoa switching times inductive load foward biased soa forward biased aoa switching times inductive load versus temperature ESM2012DV 4/8
turn-on switching waveforms dc current gain typical v f versus i f peak reverse current versus di f /dt turn-on switching test circuit ESM2012DV 5/8
turn-on switching test circuit turn-off switching waveforms turn-off switching test circuit of diode turn-off switching waveform of diode ESM2012DV 6/8
dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n4 0.157 o 7.8 8.2 0.307 0.322 b e h o n j k l m f a c g d isotop mechanical data ESM2012DV 7/8
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - m alaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . ESM2012DV 8/8
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